Investigation of Molybdenum Nitride Gate on SiO2 and HfO2 for MOSFET Application

Abstract

It has been reported that the work function of nitrided molybdenum (MoN) can be modulated by the atomic ratio of and is suitable for gate material of complementary metal oxide semiconductor devices. In this work, we investigated the characteristics of prepared by reactively sputtering deposition from the gate electrode point of view. The main phase of the films is MoN(200). As the ratio increases, the microstructure of film tends to be amorphous-like and the resistivity increases. After high-temperature annealing, the phase remains stable and grain size increases slightly. The film has better immunity to sputtering damage than film; therefore, the sputtering deposition method could be a choice of metal gate deposition as -based dielectric is used. The work function of increases with the increase of nitrogen content and tends to saturate at the valence band of Si. No Fermi-pinning effect is observed on film. The work function and thermal stability of show good thermal stability on both and films up to at least. All of these results indicate that MoN is a good candidate of gate electrode for p-type metal oxide semiconductor field effect transistors (pMOSFETs) or fully depleted SOI devices.