Investigation of micro-structural and transport properties of CdXCu1-XS thin films prepared by SPT

Abstract

II–VI group semiconductor materials have been attractive scientific community with immense interest in recent times due to its potential technological application in nano-electronics. In optoelectronics and photonics Cadmium Sulfide have been widely concede as a source of customization of materials in futuristic technology. CdxCu1-xS thin films are primed by spray pyrolysis technique (SPT), known for its quality and large surface areas. The varying flow rate of deposited precursor solution was also considered for constant Cu (3%) doped CdS thin films. Characterization and micro-structural property analysis of the prepared samples have been completed by XRD, AFM and two-probe resistivity techniques. Structural analysis of XRD appear as polycrystalline films and a large numbers of grains are oriented in c-axis. AFM results show a trend of inverse Ostwald ripening for the films prepared by using flow rate variation in SPT. When Cu is integrated in the CdS thin films grain size decreases and Cu substitution in the samples represents exceptional behavior due to overstrained of the activation energy and semiconducting nature of the samples. Inverse Ostwald ripening phenomenon has been also observed for Cu doped CdS thin films.