Abstract
We report investigations of optical transmission bistability in an unprocessed InGaAs-InAlAs superlattice p- i- n structure acting as a wireless self-electro-optical effect device (SEED). We have observed and compared optical and electrical bistabilities, and examined the time dependence. The switching energy turns out to be as small as 2fJμm −2, which compares favourably with the performance of conventional silicon MOSFETs. Modeling shows that the observed hysteresis loop results from the combination of negative electro-absorption and built-in negative dynamic resistance (NDR). We finally report the computation of all-optical bistability for a p- i- n structure inserted in a Fabry-Pérot interferometer.
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