Abstract
We report investigations of optical transmission bistability in an unprocessed InGaAs-InAlAs superlattice p-i-n structure acting as a wireless self-electrooptical effect device. We have observed and compared optical and electrical bistabilities, and examined the time and temperature dependences. The switching energy turns out to be as small as 2 fJ mu m-2, which compares favourably with the performance of conventional silicon MOSFETS. Modelling shows that the observed hysteresis loop results from the combination of negative electroabsorption and built-in negative dynamic resistance. We finally report the observation of a novel optical bistability effect which is entirely due to the negative dynamic resistance of the structure.
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