Investigation of low-fluence hydrogen implantation-induced cracking in B doped Si0.70Ge0.30

Abstract

The splitting kinetics of B doped Si0.70Ge0.30 layers with low-fluence hydrogen implantation (3 × 1016/cm2) was investigated. For H-implanted Si/Si0.70Ge0.30/Si structures without B doping, no cracking was observed in the Si0.70Ge0.30 layer. Upon increasing the B concentration in the buried Si0.70Ge0.30 layer to 3 × 1019/cm3, a continuous cracking was observed parallel to the surface. A series of analyses indicate that B doping can greatly promote the evolution of hydrogen related defects, which in turn enhances H diffusion to form cracks. Since the hydrogen fluence (3 × 1016/cm2) is only half of the typical fluence required for a conventional ion-cut process, our research may bring an alternative path for SiGe on insulator (SGOI) fabrication technique in manufacturing and enable the subsequent application in postsilicon era.