Abstract
A novel antifuse structure with planar-type polysilicon pad is described. The formation of a link between the aluminum electrodes after application of a programming voltage was also investigated. The structure consists of Al/SiO 2poly-Si/SiO 2/Al layers. The poly-Si pad was doped with boron and the thickness of the antifuse dielectric was 9 nm. When a programming voltage is applied, the electrodes are connected by the mass transfer of aluminum through the dielectric and the doped polysilicon pad. The on-state resistance of about 10 Ω, which is the lowest on-state resistance ever reported, is obtained after breakdown with 9.9 V programming voltage. Scanning Auger microscopy analyses show the propagation of a link, as mass transfer of aluminum in the boron doped polysilicon pad. The elliptical link has a maximum diameter of 1.0 μm in the horizontal direction and a minimum diameter of 320 nm in the vertical direction.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
