Abstract
The effects of using lattice-modulated AlInGaN as barriers in the active region were investigated in near-ultraviolet light-emitting diodes (LEDs). Both a stronger localization effect with wider barriers and a higher energy band gap existed in AlInGaN/InGaN LEDs, compared with GaN/InGaN LEDs. An increase in the carrier concentration in the active layer, a reduction in lattice mismatch that induced polarization mismatch in the active layer, and suppression of electron overflow can be found by numerical simulation. By 100 mA current injection, the AlInGaN/InGaN LED output power can be increased by 33.1%, compared with that of GaN/InGaN LED.
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