Performance of InGaN/AlGaInN Near-UV LEDs With Ni/Ga<sub>2</sub>O<sub>3</sub>/Ag/Ga<sub>2</sub>O<sub>3</sub> Electrode

Abstract

We fabricated Ga2O3-based transparent conductive electrodes (TCEs) for use in near-ultraviolet (NUV) light-emitting diodes (LEDs) by embedding metal layers into Ga2O3. We employ Ni and Ag layers to improve current injection and spreading properties. Our fabricated Ni/Ga2O3/Ag/Ga2O3 multilayer (annealed at 600 °C, 1 min) deposited on an NUV LED wafer exhibits 83% transmittance at 385 nm with a specific contact resistance of $8 \times 10^{-3}~\Omega ~\cdot $ cm2. An NUV LED fabricated with a Ni/Ga2O3/Ag/Ga2O3 TCE exhibits a 17% increase in light output power at 150 mA and a 3.2% decrease in forward voltage at 20 mA over those of an indium tin oxide NUV LED.