Abstract
The electrical and radio frequency (RF) characteristics of InAlGaN/GaN high electron mobility transistors (HEMTs) device with cap layer are presented in this work. In this work, Silicon carbide was used as a substrate for its excellent thermal conductivity. Here, the thermal model was used to investigate the simulation of temperature distribution at 300k. Moreover, the DC and AC performance characteristics of the device were investigated using Silvaco Atlas Technology Computer Aided Design TCAD simulator. The results showed that, the maximum obtained drain current that was 1.35 A. In addition to, the RF parameters were extracted. The cut-off frequency ft is (73 GHz), the maximum oscillation frequency fmax is (353 GHz), maximum stable gain (Gms) and maximum available gain (Gma) with a value of about (116 dB). The obtained results showed that the InAlGaN/GaN HEMT device based on SiC performance is suitable for microwave applications.
Published Version
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