Investigation of high resistivity [formula omitted]-type FZ silicon diodes after 60Co [formula omitted]-irradiation

Abstract

In this work, the effects of 60Co γ-ray irradiation on high resistivity p-type diodes have been investigated. The diodes were exposed to dose values of 0.1, 0.2, 1, and 2MGy. Both macroscopic (I–V, C–V) and microscopic investigations, by means of Thermally Stimulated Current (TSC) and Deep Level Transient Spectroscopy (DLTS) techniques, were conducted to characterize the radiation-induced changes. The investigated diodes were manufactured on high resistivity p-type Float Zone (FZ) silicon and were further classified into two types based on the isolation technique between the pad and guard ring: p-stop and p-spray. After irradiation, the macroscopic results of current–voltage and capacitance–voltage measurements were obtained and compared with existing literature data. Additionally, the microscopic measurements focused on the development of the concentration of different radiation-induced defects, including the Boron interstitial-Oxygen interstitial (BiOi) complex, the Carbon interstitial-Oxygen interstitial (CiOi) defect, the H40K, and the so-called IP∗.To investigate the thermal stability of induced defects in the bulk, isochronal annealing studies were performed in the temperature range of 100°C to 300°C. These annealing processes were carried out on diodes irradiated with doses of 1 and 2MGy. Furthermore, in order to investigate the unexpected results observed in the C–V measurements after irradiation with high dose values, the surface conductance between the pad and guard ring was measured as a function of both dose and annealing temperature.