Abstract
High‐quality GaN film is grown on graphene with the underneath sputtered AlN modified layer using metal organic chemical vapor deposition. Due to the modulation effect of sputtered AlN on the surface potential and the chemical reactivity of graphene, the nucleation probability of GaN is significantly improved. The GaN epitaxial layer shows excellent crystal quality and surface morphology, and has very low threading dislocation density of 1.78 × 108 cm−2. Furthermore, the mechanism of threading dislocation suppression is revealed according to the transmission electron microscope results. The improved nucleation probability and enhanced lateral growth mode lead to the formation of short‐range stacking faults in c‐plane GaN, which block the propagation of threading dislocations along the growth direction. Moreover, the formation and evolution mechanism of the short‐range stacking faults are discussed. The results in this work not only offer a promising approach to propel the widespread application of GaN on graphene, but also provide a new idea for the regulation and suppression of defects in the growth of nitride semiconductors.
Published Version
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