Abstract
In this work solution growth technique as well as electrodepostion technique was employed to directly grow ZnO nanorod arrays on the p-GaN layer for fabricating n-ZnO nanorod/ p-GaN heterojunction diodes. Microstructure and room temperature photoluminescence (PL) measurement confirmed the growth of ZnO nanorod arrays with near perfect microstructure, stoichiometry and excellent optical quality. Current-voltage (I-V) measurements showed the formation of diode structure with a typical diode characteristic having a turn on voltage of 2.5V and 6.4V respectively, for solution grown and electrodeposited ZnO nanorod based p-n diode. A low resistive ITO coated glass was used to make contact with the top nanorod arrays and spectral response of the p-n diode was investigated. UV response particularly from solution grown ZnO nanorod based p-n diode was very promising.
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