Abstract

A simple and facile sonochemical route was described for the selective-area growth of well-aligned ZnO nanorod arrays on Si wafers under ambient conditions. ZnO nanorod arrays were selectively grown on pre-formed various patterns of zinc seed layer, such as letters and dots of uniform or non-uniform sizes. The average diameter and length of ZnO nanorods were 76 nm and 475 nm, respectively. The crystal structure of ZnO nanorods were investigated by transmission electron microscopy and X-ray diffraction. Based on this simple sonochemical technique, highly crystalline ZnO nanorod arrays can be selectively grown on other flat substrates with various patterned morphologies.

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