Abstract
Electrical and photovoltaic properties of Au/poly(propylene glycol)-b-polystyrene/n-Si diode were investigated under various illumination intensities. Field emission scanning electron microscope micrographs of the interfacial polymer layer were provided for verification of the nano-fibre pattern. The current–voltage (I–V) measurements of the diode in the dark and under various illumination intensities (50–250 mW/cm2) were carried out and the main electrical parameters of the diode such as leakage current (I0), ideality factor (n), zero-bias barrier height (ΦB0), series and shunt resistance (Rs and Rsh), density of surface states (Nss), open circuit voltage (Voc) and short-circuit current (Isc) were obtained in these conditions.
Published Version
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