Abstract
Poly (linolenic acid)-g-poly (caprolactone)-g-poly (t-butyl acrylate) (PLilPCLPtBA) graft copolymer was used as an interfacial layer in Au/n-Si Schottky diode. The novel PLilPCLPtBA layer was coated on n-Si single crystal wafer through an electrospinning system. Nanofiber characteristics of the PLilPCLPtBA layer was obtained by a Field Emission Scanning Electron Microscope (FEG-SEM). The current–voltage (I–V) measurements of these Au/n-Si diodes with and without polymeric layer were conducted in dark and under various illumination intensity levels (halogen lamp) at room temperature. Main electrical parameters such as series resistance (Rs), shunt resistance (Rsh), ideality factor (n), reverse saturation current (Io), zero-bias barrier height (Φbo) and interface state density (Nss) of the structures were extracted from forward-bias I–V data.
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