Abstract
The authors report on the drain current transient of Al0.25Ga0.75As∕In0.2Ga0.8As pseudomorphic high electron mobility transistors passivated by low-k benzocyclobutene (BCB). Compared to the more commonly used silicon nitride, BCB has a lower dielectric constant and loss tangent and is becoming popular for passivation. However, its effect on the device drain current transient has not been studied so far. In this work, the effectiveness of BCB as a passivation material was investigated in relation to the device drain current transient response. The surface trap model was also used to describe the transient behavior quantitatively.
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