Abstract
ABSTRACTSurface passivation for the devices is very important for ensuring the DC and RF performances as well as the reliability in pseudomorphic high electron mobility transistors (PHEMT's). We performed the comparative study on the DC, RF and noise characteristics of the 0.1 μm gate length PHEMT's passivated by low dielectric constant benzo-cyclo-butene (BCB) layers with those passivated by the conventional Si3N4 or the. The noise performance of the BCB passivation for the PHEMT's was much superior to that of the Si3N4, whereas the DC and other RF properties were not significantly affected by the passivation materials.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
