Abstract
In the present work we demonstrate the possibility of using the photoinduced current transient spectroscopy (PICTS) method to study the defects in Cu(In,Ga)(S,Se)2 films which can be used as an absorber layer in solar cells (SCs). The conducted experiments enable one to determine the parameters (activation energies and effective capture cross-sections) of the defects revealed in the films under study.
Full Text
Submitted Version (
Free)
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call