Synthesis of Cu2ZnSnS4 Thin Film Using Electrodeposition Method: Its Potential Use as Light Absorber Layer in Solar Cells

Abstract

Thin film Cu2ZnSnS4 (CZTS) is an alternative semiconductor used as a light absorber layer in solar cells. CZTS can replace silicon that is commonly used as a commercial semiconductor. The advantage of using CZTS as an absorber layer is due to the abundance of its elemental components, and the high value of its absorption coefficient. The absorber layer was electrodeposited on ITO glass substrates. The films were deposited at room temperature using potentiometer at a potential of -1.05 V for 30, 45, and 60 minutes. After that, the films were annealed at 500 °C, for 45 minutes in N2/H2S atmosphere. Based on X-ray diffraction analysis, the polycrystalline thin film obtained fell into the kesterite crystal phase. The value of the optical band gap energy for the CZTS thin film varied from 1.50 to 2.2 eV with a film thickness of 1.039 to 3.352 µm, depending on the length of time of electrodeposition. The sample of CZTS from the electrodeposition time of 45 minutes showed the best result and met the requirements of an absorber layer for solar cells.