Abstract
Deep levels in vanadium-doped CdTe and CdZnTe crystals grown by vertical Bridgman for photorefractive applications are reviewed. Based on photo-induced current transient spectroscopy, deep-level transient spectroscopy and deep-level optical spectroscopy, deep traps are identified and their electrical and optical properties are characterized. A discussion about their origin and a comparison with results obtained by other spectroscopy techniques are given.
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