Characterization and identification of the deep levels in V doped CdTe and their relationship with the photorefractive properties

Abstract

Deep level characterization by photoinduced current transient spectroscopy, deep level transient spectroscopy and deep level optical spectroscopy is presented on vanadium doped CdTe crystals grown for photorefractive applications. A main electron trap at 0.95 eV, connected with V doping, is proposed to be the main deep level involved in the photorefractive effect of CdTe:V on the bases of the σ n 0 and σ p 0 ionization cross-sections measurements as compared to spectroscopic results of the electron-hole competition factor obtained on CdTe:V.