Abstract
In this study, Nb2O5 ceramic was used as the target to deposit the Nb2O5 thin films on glass substrates with the radio frequency (RF) magnetron sputtering method. Different deposition temperatures and O2 ratios were used as parameters to investigate the optical properties of Nb2O5 thin films. The deposition parameters were a pressure of 5 × 10−3 Torr, a deposition power of 100 W, a deposition time of 30 min, an O2 ratio (O2/(O2 + Ar), in sccm) of 10% and 20%, and deposition temperatures of room temperature (RT), 200, 300 and 400 °C, respectively. We found that even if the deposition temperature was 400 °C, the deposited Nb2O5 thin films revealed an amorphous phase and no crystallization phase was observed. The optical properties of transmittance of Nb2O5 thin films deposited on glass substrates were determined by using a ultraviolet-visible (UV-vis) spectrophotometer (transmittance) and reflectance spectra transmittance (reflectance, refractive index, and extinction coefficient) in the light wavelength range of 250–1000 nm. When the O2 ratio was 10% and the deposition temperature increased from RT to 200 °C, the red-shift was clearly observed in the transmittance curve and the transmission ratio had no apparent change with the increasing deposition temperature. When the O2 ratio was 20%, the red-shift was not observed in the transmittance curve and the transmission ratio apparently decreased with the increasing deposition temperature. The variations in the optical band gap (Eg) values of Nb2O5 thin films were evaluated from the Tauc plot by using the quantity hν (the photon energy) on the abscissa and the quantity (αhν)r on the ordinate, where α is the optical absorption coefficient, c is the constant for direct transition, h is Planck’s constant, ν is the frequency of the incident photon, and the exponent r denotes the nature of the transition. As the O2 ratio of 10% or 20% was used as the deposition atmosphere, the measured Eg values decreased with the increase of the deposition temperature. The reflectance ratio, extinction coefficient, and refractive index curves of Nb2O5 thin films were also investigated in this study. We would show that those results were influenced by the deposition temperature and O2 ratio.
Highlights
Different metal-oxide thin films are increasingly applied for a wide range of optical and microelectronic applications
In the case of optical applications, Nb2O5-based thin films are often used as high index and low loss materials; for example, they can be used as optical waveguides [3,4], interference filters, antireflective or antireflection (AR) coatings or electroluminescent devices [5,6,7]
The simplest interference antireflection (AR) coating can be achieved by using a single quarter-wave layer of oxide thin films whose refractive index is chosen as the square root of the substrate’s refractive index
Summary
Different metal-oxide thin films are increasingly applied for a wide range of optical and microelectronic applications. The Nb2O5 thin films have the properties of high refractive index, low extinction coefficient, and high transparent ratio in the UV-vis-NIR (ultraviolet-visible near-infrared) region [12,13]. Many different methods are investigated to deposit Nb2O5 thin films.
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