Abstract
Understanding its resistance switching (RS) properties is beneficial to the development of resistance random access memory (RRAM). In this work, a RRAM device with a Cu/GeSO/TiN structure (from top to bottom) is investigated. Before forming, the device can operate with a small ratio (<10) of high resistance state (HRS) to low resistance state (LRS). The distribution of this ratio is dependent on device cell size, and is a result of oxygen accumulation. By applying a positive bias during forming process, an abnormal relatively flat current is observed. These observations are confirmed by testing devices of different cell sizes. Bias stresses and capacitance-voltage (C–V) measurements are also used to confirm the changes in film characteristics. In addition, material analyses of transmission electron microscopy (TEM) images are also applied to examine the diffusion of Cu ions that affect the forming process of this Cu/GeSO/TiN device.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call