Abstract

We study the dependence of total secondary electron yield (SEY) of micro-porous silver surface on incident angle of primary electron. First, we produce regular and random micro-porous surfaces on silver plated aluminium samples by photolithography pattern process and direct chemical etching method, respectively. Second, we study the dependence of the SEY characteristics of these surfaces on the primary electron incident angle from 0° to 60°. The experimental results show that micro-porous surface with large porosity can suppress SEY effectively either for normal incidence or oblique incidence. The maximum SEY of the directly chemical etched sample can reach a 45% reduction relative to the original flat sample. We also show the anomalous experimental phenomenon that the SEY of directly chemical etched sample with large porosity does not increase with incident angle. Third, we explain the complicated SEY dependence on incident angle qualitatively by the secondary electron trapping effect in micro-pores as well as the Monte Carlo simulation based on phenomenological model of secondary electron emission. Finally, we suggest a third order polynomial formula to describe the SEY dependence on incident angle which will be useful in particle simulation. In total, we demonstrate that micro-porous surface with large porosity is effective in SEY suppression under both normal and oblique incidence and thus the proposed direct chemical etching method is prospective in related areas such as multipactor improvement.

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