Inverter and Universal Gates Implementation Using Novel Core Insulator Double Gate (CIDG) MOSFETs

Abstract

The Core Insulator Double Gate (CIDG) MOSFET has been explored for digital applications in which the presence of core insulator diminishes the bulk conduction and reduces the off state current. The drain currents of n- and p-type CIDG MOSFETs are matched by tuning gate work functions to deliver the symmetrical pull-up and pull-down characteristics. The inverter and universal logic gates (NAND and NOR) have been designed and implemented to show the usability of the CIDG MOSFETs for digital applications. The DC and transient characteristic of the inverter along with Static Noise Margin (SNM) and time delay parameters have been examined. The designed Inverter shows steeper voltage transfer characteristics, reduced short circuit power dissipation and improved noise immunity. The CIDG MOSFET based NAND and NOR gate implementation and validation by transient analysis have been shown for the first time to the best knowledge of the authors. Also, the rise and fall times of the inverter, NAND and NOR gates have been found to be improved as compared to the DG MOSFET counterparts. The present analysis establishes that CIDG MOSFETs are useful in designing digital circuits with improved performance.