Inverse Modeling as a Basis for Predictive Device Simulation of Deep Submicron Metal-Oxide-Semiconductor Field Effect Transistors

Abstract

A simple, flexible inverse modeling technique for deep submicron metal-oxide-semiconductor field effect transistors (MOSFETs), which is based on capacitance versus voltage (C–V ) and current versus voltage (I–V ) data measured in the so-called linear device operation regime is presented. Based on the resultant device structure and doping profile, device simulation yields good results not only for the linear regime but also under hot-carrier conditions. Substrate current, for example, is well reproduced over more than five orders of magnitude. Since the polysilicon-gate doping profile, the channel doping profile and the source/drain doping profile are extracted separately, they can be varied independently, and it is possible to predict the impact of process parameter variation. Good agreement between the simulation and measurement results is found for devices with different channel implants, shallow source/drain-extension implants or oxide thicknesses without any further inverse modeling.