Abstract
In this paper, we discuss design considerations for an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a lateral asymmetric channel (LAC) doping profile. We employed a <TEX>$0.35\;{\mu}m$</TEX> standard complementary MOSFET process for fabrication of the devices. The gates to the LAC doping overlap lengths were 0.5, 1.0, and <TEX>$1.5\;{\mu}m$</TEX>. The drain current (<TEX>$I_{ON}$</TEX>), transconductance (<TEX>$g_m$</TEX>), substrate current (<TEX>$i_{SUB}$</TEX>), drain to source leakage current (<TEX>$i_{OFF}$</TEX>), and channel-hot-electron (CHE) reliability characteristics were taken into account for optimum device design. The LAC devices with shorter overlap lengths demonstrated improved <TEX>$I_{ON}$</TEX> and <TEX>$g_m$</TEX> characteristics. On the other hand, the LAC devices with longer overlap lengths demonstrated improved CHE degradation and <TEX>$I_{OFF}$</TEX> characteristics.
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