Introduction of Gate-All-Around FET (GAAFET)

Abstract

The Gate-All-Around Field-Effect Transistor (GAAFET) represents a significant advancement in integrated circuits technology, offering enhanced functionality compared to its predecessor, the Fin Field-Effect Transistor (FinFET). This paper provides a comprehensive overview of GAAEFT, its historical developments, current state, and recent developments. The introduction section mentioned the importance of changing from FinFET to GAAFET structures. The historical developments section traces the evolution of GAAFET technology, highlighting key milestones and breakthroughs. The current state section addresses the limitations of silicon-based microelectronics technology, including challenges related to heat dissipation, reliability, and fabrication processes. The subsequent section explores the development of GAAFET technology, with a focus on the latest techniques, such as gate stacking, oxidation, and asymmetric non-local lateral Gaussian doping, which aim to improve electrostatic performance, mitigate short-channel effects, and enhance threshold voltage control. This work reveals the potential for the current and future development of GAAFET technology and its potential for wider application in integrated circuits design and fabrication.