Abstract
Even for the most advanced IC manufacturing technology now being transferred to 300 mm the gettering of metallic impurities is of vital importance. To achieve a gettering performance of Si wafers different approaches can be pursued: highly boron doped p+ substrates, internal gettering IG and gettering by backside treatment. This contribution will focus on internal gettering that can be realised by a sufficient density of oxygen precipitates (also known as BMDs, Bulk Micro Defects) which is mainly determined by the crystal growing conditions. The crystal growing represents the largest cost driver in the Si manufacturing. Since the transition to 300 mm is purely cost driven the required BMD performance has to consider not only the feasible supplier capability, but also the cost impact.
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