Abstract
ABSTRACTWe report the results of a study of the microstructural changes brought about by the gettering of metallic impurities in silicon. Phosphorus gettering proceeds by the formation of metal disilicides at the silicon/phosphosilicate glass interface. By showing that iron is strongly localized at the interface by phosphorus gettering, we present the first evidence that phosphorus gettering can proceed independently of Fermi level effects. Our first results on the intrinsic gettering of nickel lend support to the notion that the emission of silicon interstitials brought about by phosphorus diffusion (and SiP formation), or intrinsic gettering (SiOx, formation), plays an important role in the gettering process.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
