Intracenter transitions in hydrogenic donors confined in GaAs-AlGaAs multiple quantum wells

Abstract

In this paper, intra-impurity transitions of hydrogenic donors in GaAsAlGaAs nultiple quantum wells, as probed in recent electronic Raman scattering and far-infrared magneto-absorption studies, are reviewed. These measurements indicate that the binding energies of the impurities become larger as the width of the well is reduced and that the impurities exhibit a position dependent binding energy with those at well center exhibiting the largest values. Both of these conclusions are in good agreement with effective mass calculations. Because the impurities exhibit position dependent binding energies and because intracenter transitions are sensitive to these differences, electronic Raman scattering and far-infrared magneto-absorption should be valuable probes for the investigation of doping profiles that have been modified as a result of diffusion or segregation during growth.