The properties of hydrogenic donors confined in GaAs-AlGaAs multiple quantum wells

Abstract

Abstract Photoluminescence, electronic Raman scattering and far-infrared absorption have been employed in the study of hydrogenic donors in GaAsAlGaAs multiple quantum wells. These measurements indicate that the binding energies of the impurities become larger as the width of the quantum well is reduced. Furthermore, the binding energy depends upon the location of the impurity in the well, with those at the center being the most tightly bound. The magnitude of these effects are in good agreement with theoretical results. These studies suggest that the experimental probes employed should be valuable for the investigation of “spike doping” profiles that have been modified as a result of diffusion or segregation during growth.