Abstract
We report the use of impurity-free vacancy disordering techniques to control the nonlinear optical properties of GaAs-AlGaAs multiple quantum wells. These processes result in a shift in the position of the absorption edge to higher energy and have been used to modify the second- and third-order nonlinear coefficients. Working at photon energies just below the half bandgap we have observed a reduction of in the value of nonlinear refractive coefficient for a bandgap shift of around 40 nm. This change arises due to the combined effects of increasing the bandgap and increasing the detuning. The process can also result in a modulation in the magnitude of the second-order susceptibility coefficient and provides a potential mechanism for realizing quasi-phase-matched structures.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Pure and Applied Optics: Journal of the European Optical Society Part A
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
