Intégration monolithique de l'étage de sortie de la commande rapprochée d'un transistor VDMOS

Abstract

This paper deals with the monolithic integration around vertical power devices. It presents the work carried out toward the integration of the gate driver within the power device, thanks to a N-MOS technology. It is based on modeling and analysis of correct functional operation of the lateral N-MOS devices thanks static curves. These devices are integrated within the power device thanks to a full share of technological steps between the two types of devices. Thanks to the analysis, a full gate driver is designed and integrated. At the end of the paper, the work is partially validated thanks to experimental results.