Abstract
The investigation of electron-phonon coupling in near surface GaAs1−xPx/AlyGa1−yAs quantum well structures using wavelength and intensity dependent Raman spectroscopy shows that in the near surface quantum well case, coupled modes are situated at the frequency between longitudinal optical (LO) and transverse optical phonons of GaAsP, which is forbidden for the coupled electron-phonon modes in the bulk ternary alloy. The observed “GaAs like” and “GaP like” LO phonon-intersubband plasmon coupled mode frequencies decrease with increase in carrier density. These results corroborate well with the theoretical calculation for variation of two dimensional electron gas-phonon coupling with carrier density in ternary alloys.
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