Abstract
The intersubband absorption linewidth dependence on well width in GaAs quantum well is calculated. Three mechanisms of scattering have been discussed there: carriers scattering by optical (LO), acoustic (LA) phonons and ionized impurity centers (ION). The method which used for calculations is similar to a well-known method of calculating transport mobility. The estimation for absorption coefficient is proposed, based on two-dimensional dynamical conductivity expression. The LO phonon emission process is activated starting from some quantum well (QW) width so it has its impact on absorption linewidth.
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