Abstract
The observation of electronic Raman scattering in one-dimensional semiconductors has so far been limited to arrays of laterally structured quantum wells. Recent progress in the growth of core-shell nanowires has opened the possibility to reach the quantum confinement regime for single nanowires. Here, the authors present measurements of the one-dimensional subband structure of single wurtzite-phase GaAs nanowires by resonant Raman spectroscopy. The obtained energetic distances between consecutive electron or hole subbands are nicely reproduced by realistic k∙p band structure calculations.
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