Abstract
Band structure calculations are performed on narrow InGaAs/InP quantum wells (QWs) including gradual interface effects. Within the confines of the envelope approximation, the transfer matrix method is used, with adaptation to multi-band models. A comparison is made for two structures with fundamental absorption edges near 1.3 μm, an abrupt eight monolayers (ML)-wide lattice-matched In0.532Ga0.468As/InP QW, as a reference, and a QW with a gradual profile because of interface effects. With respect to the reference QW, the in-plane electron effective mass in the gradual structure is slightly higher. The distance between heavy hole (HH) and light hole (LH) subbands is enhanced. Due to an asymmetric profile, a splitting occurs for the hole subbands, equivalent to that induced by a 500 kV cm-1electric field in the reference QW. The HH in-plane effective mass is not significantly affected by the interface effects. For LHs, the upper branch remains electron-like and the associated in-plane effective mass is slightly reduced (in absolute value), while the lower branch is hole-like with a large value of effective mass.
Published Version
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