Abstract
Formation of an interstitial solid solution Hf5GaxSn3 (x=0–1) based on the binary compound Hf5Sn3 (structure type Mn5Si3, Pearson symbol hP16, space group P63/mcm, a=8.36562(6), c=5.70775(4)Å from X-ray powder diffraction) was established at 600°C. The crystal structure (structure type Hf5CuSn3, ordered derivative of Ti5Ga4, hP18, P63/mcm) was refined on X-ray single-crystal diffraction data for three compositions: Hf5Ga0.16(3)Sn3 (a=8.3288(12), c=5.6988(11)Å), Hf5Ga0.53(2)Sn3 (a=8.4205(12), c=5.7655(12)Å) and Hf5GaSn3 (a=8.5564(12), c=5.7859(12)Å). The Ga atoms occupy Wyckoff position 2b at the centres of Hf6 octahedral interstices.
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