Interpretation of the switching effect in amorphous semiconductors as a recombination instability

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For an explanation of the switching effect appearing on thin layers of amorphous semiconductors, a double-injection model is developed where the presence of diffusion currents in front of the electrodes is assumed in the high-resistance state. In the diffusion regions recombination takes place. The cause of the switching effect is seen in a recombination instability. Because of a saturation of the recombination current the life time of the free carriers becomes long enough for the diffusion length to extend over the full length and the high-resistance state to collapse.