Optical Dimensional Phenomena in Thin Layers of Gold and Atomic Semiconductors

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We have investigated optical dimensional phenomena which are manifested as the thickness dependences of the indices of refraction n and absorption k and of the magnitude of the quasi‐Brewster angle of thin layers of gold. In the range of thicknesses 20 180 A, all these phenomena have an oscillating character. Based on the earlier published experimental data on the energy coefficients of transmission T and reflection R of thin layers of atomic semiconductors (Se, Te, Ge, and Si), new calculations of the thickness dependences of n and k have been carried out without the simplifying assumptions which lead to incorrect results. The errors in determining the optical constants of thin layers from photometric data have been analyzed in detail. The causes of the earlier errors in works devoted to this kind of investigation have been established.