Abstract
Internal friction of (Si0 2 ) 1-x (Ge0 2 ) x glasses (x = 0, 5, 10, 24 and 100 mole%) is measured at temperatures between 1.6 and 280 K. The data are fitted with the equations for thermally activated relaxation with distributing activation energies in symmetrical double-well potentials. From the determined relaxation strength spectra for each sample, the contributions from each type of microscopic structural units are calculated assuming that transverse motion of the bridging O atom in Si-O-Si, Si-O-Ge or Ge-O-Ge bridge (T model) is the microscopic unit responsible for relaxation. For instance, the magnitude of internal friction for Si0 2 -5% Ge0 2 or 24% GeO 2 is calculated from the data of pure Si0 2 , Si0 2 -10% Ge0 2 and pure Ge0 2 . The calculated results agree well with the measurements of Si0 2 -5% Ge0 2 and Si0 2 -24% Ge0 2 . Thus T model is shown to be quantitatively consistent with internal friction of SiO 2 -GeO 2 binary glasses.
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