Internal friction in glassy semiconductors of the Ge-As-Se system

Abstract

Relaxation processes in glasses of the Ge-As-Se system have been investigated by the internal friction technique. The process that can be classified as the β relaxation process has been revealed in the temperature range 180–280 K. The assumption has been made that a change in the magnitude of the internal friction maximum in the above temperature range with a change in the chemical composition is associated with the change in the concentration of structural units responsible for the β relaxation in these materials. It has been established that the activation energy for the α relaxation process in the glasses of the Ge-As-Se system under investigation increases considerably in the range of the average coordination number Z = 2.6.