Abstract
Abstract Numerical calculations describing the influence of the interference of internally-reflected radiation on the photoelectromagnetic (PEM) effect in graded energy-gap Cd x Hg 1− x Te structures are presented. The spectral voltage responsivities of graded-gap IR-PEM detectors are reported as functions of the semiconductor structure thickness, composition profile of the structure, doping level, surface recombination velocity and reflection coefficient from the structure substrate. The thickness of graded-gap PEM detectors is one of the more important parameters which can affect their performance.
Full Text
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call