Abstract
The existence of the so-called interference photoconductivity (PC) and photoelectromagnetic (PEM) effects in the investigated thin films of a-Si:H,F is shown. These effects appear due to interference of radiation in a sample. In this paper, the fitting of interference PC and PEM responses to theoretical relationships is presented. Values of carrier lifetime, diffusion length, and surface recombination velocity have been estimated. Spectral dependences of individual quantum efficiency coefficients for PC and PEM effects can give information about energy distribution and type of electronic states in the investigated samples. Influence of radiation intensity on optical and recombination parameters of the material is shown.
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