Abstract
The interfacial interactions of high-temperature superconducting YBa 2Cu 3O 7 − x (YBCO) thin films on Si substrates with polycrystalline yttrium-stabilized ZrO 2 (YSZ) buffer layers have been characterized using transmission electron microscopy in combination with X-ray microanalysis. It has been found that polycrystalline YSZ buffer layers do not prevent detrimental interdiffusion between a Si substrate and a YBCO film during film deposition at 700 to 750°C. Diffusion is relatively fast along the grain boundaries of the columnar-structured YSZ buffer layer and results in the formation of Cu rich precipitates at the YSZ/Si interface and in amorphous regions at the YBCO/BaZrO 3/YSZ interface. In addition, a local surface roughness of the YSZ upper interface gives rise to significant deviation from the c-axis orientation of the YBCO film ([001] axis of YBCO parallel to the surface normal of the Si substrate). It is therefore important to maintain a smooth surface as well as an epitaxial growth of the YSZ buffer layer.
Published Version
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