Abstract
The structural and electrical properties of YBa 2Cu 3O 7− x (YBCO) thin films grown on (110) planes of SrTiO 3 (STO) by magnetron sputtering were studied. The growth of (103)YBCO films on (110)STO single layer crystal substrate is compared to the growth of (103)YBCO on STO buffer layers deposited by rf sputtering on a YSZ\\(100)Si substrate. More predominant growth of the (103) oriented grains on STO buffer layers is considered a consequence of the small domain structure of the STO\\YSZ buffer layer and lateral dynamics of the growth mechanism during the deposition of YBCO. (103) YBCO films have the c-axis 45° inclined to the substrate surface and their structural and electrical anisotropy is predicated by the microstructure of (110)SrTiO 3 single crystals or STO buffer layers grown on YSZ\\(100)Si substrates.
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