Abstract
Medium energy ion scattering spectroscopy (MEIS) could identify ∼1 nm interface layer with compressive strain, which depends sensitively on the interface treatment conditions such as oxynitridation, ozone oxidation, tilt of Si(0 0 1) substrates. The interface strain relaxation always shows improvements in gate oxide reliability. Atomic scale investigations of strain profiles with MEIS are reviewed for SiO 2 /Si(0 0 1) interfaces.
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