Abstract
The thickness of ultrathin gate oxides thinner than 10 nm were analyzed with Medium Energy Ion Scattering Spectroscopy (MEIS), High Resolution Transmission Electron Microscopy (HRTEM) and Spectroscopic Ellipsometry (SE). MEIS showed the presence of a 1.3 nm transition interlayer between SiO2 and Si substrate. For an ultrathin gate oxide, the thickness values estimated with MEIS, TEM, and SE were 6.2 nm, 7.3 nm and 6.7 nm, respectively. The discrepancies and the complimentary features were discussed.
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