Abstract
The interface stability and microstructure between amorphous and crystalline ferromagnetic (FM) layers Fe56Co24B20 and Co70Fe30 (at. %) and oxide barrier layers (AlO) deposited by physical vapor deposition, in both as-deposited and annealed states, have been studied using hysteresis loops for magnetic measurement, x-ray photoelectron spectroscopy for elemental depth profiling, and transmission electron microscopy for atomic-level microstructure. AlO was found to be amorphous on both amorphous Fe56Co24B20 and polycrystalline Fe30Co70 FM layers. Substantial Fe diffusion towards the AlO layer and Al diffusion towards the FM layer are clearly observed for the Fe56Co24B20∕AlO system when annealed above 360°C and will likely cause magnetic tunneling junction devices made from this system to fail.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
